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SK Hynix To Build $3.87 Billion Memory Packaging Fab In the US For HBM4 and Beyond
samedi 6 avril 2024, 15:00 , par Slashdot
The facility will handle assembly of HBM known good stacked dies (KGSDs), which consist of multiple memory devices stacked on a base die. Furthermore, it will be used to develop next-generations of HBM and will therefore house a packaging R&D line. However, the plant will not make DRAM dies themselves, and will likely source them from SK hynix's fabs in South Korea. The plant will require SK hynix to invest $3.87 billion, which will make it one of the most advanced semiconductor packaging facilities in the world. Meanwhile, SK hynix held the investment agreement ceremony with representatives from Indiana State, Purdue University, and the U.S. government, which indicates parties financially involved in the project, but this week's event did not disclose whether SK hynix will receive any money from the U.S. government under the CHIPS Act or other funding initiatives. Read more of this story at Slashdot.
https://hardware.slashdot.org/story/24/04/06/0041246/sk-hynix-to-build-387-billion-memory-packaging-...
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